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December 2001
FDC606P
P-Channel 1.8V Specified PowerTrench ? MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
? –6 A, –12 V.
R DS(ON) = 26 m ? @ V GS = –4.5 V
R DS(ON) = 35 m ? @ V GS = –2.5 V
R DS(ON) = 53 m ? @ V GS = –1.8 V
Applications
? Battery management
? Load switch
? Battery protection
? Fast switching speed
? High performance trench technology for extremely
low R DS(ON)
D
D
S
1
6
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–12
± 8
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–6
A
– Pulsed
–20
P D
Maximum Power Dissipation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
.606
Device
FDC606P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)
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